MTP2311N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – -60V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C733N3
Issued Date : 2011.12.27
Revised Date :
Page No. : 1/8
-60V P-CHANNEL Enhancement Mode MOSFET
MTP2311N3
BVDSS
ID
RDSON@VGS=-10V, ID=-2A
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
RDSON@VGS=-4.5V,ID=-1.7A
-60V
-3.5A
72mΩ(typ)
98mΩ(typ)
Symbol
MTP2311N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=100°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation (Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
-60
±20
-3.5
-2.2
-14
1.38
0.01
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
V
V
A
A
A
W
W/°C
°C
MTP2311N3
CYStek Product Specification