MTP2305AN3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 20V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C322N3
Issued Date : 2015.01.06
Revised Date :
Page No. : 1/9
20V P-Channel Enhancement Mode MOSFET
MTP2305AN3
BVDSS
ID@VGS=-4.5V, TA=25°C
RDSON(TYP)@VGS=-4.5V, ID=-2.8A
RDSON(TYP)@VGS=-2.5V, ID=-2A
-20V
-3.4A
79mΩ
116mΩ
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTP2305AN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTP2305AN3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTP2305AN3
CYStek Product Specification