MTP2301V3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – -20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C322V3
Issued Date : 2012.07.18
Revised Date :
Page No. : 1/9
-20V P-CHANNEL Enhancement Mode MOSFET
MTP2301V3
BVDSS
ID
RDSON(MAX)@VGS=-4.5V, ID=-2.8A
RDSON(MAX)@VGS=-2.5V, ID=-2A
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile TSOT-23 package
• Pb-free lead plating and halogen-free package
-20V
-3.4A
79mΩ(typ.)
116mΩ(typ.)
Equivalent Circuit
MTP2301V3
Outline
TSOT-23
D
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25°C, VGS=-4.5V
Continuous Drain Current @TA=70°C, VGS=-4.5V
Pulsed Drain Current
Maximum Power Dissipation
Ta=25℃
Ta=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
S
G
Limits
Unit
-20
V
±8
V
-3.4
-2.7
A
-10
1.38 (Note)
W
0.88 (Note)
-55~+150
°C
MTP2301V3
CYStek Product Specification