MTP2301S3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 20V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C322S3
Issued Date : 2013.08.29
Revised Date : 2013.09.09
Page No. : 1/8
20V P-Channel Enhancement Mode MOSFET
MTP2301S3
BVDSS
ID
RDSON(MAX)@VGS=-4.5V, ID=-1.6A
RDSON(MAX)@VGS=-2.5V, ID=-1A
Features
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-323 package
• Pb-free lead plating and halogen-free package
-20V
-1.6A
75mΩ(typ.)
113mΩ(typ.)
Equivalent Circuit
MTP2301S3
Outline
SOT-323
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTP2301S3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTP2301S3
CYStek Product Specification