MTP2301N3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
20V P-CHANNEL Enhancement Mode MOSFET
MTP2301N3
Spec. No. : C322N3
Issued Date : 2004.04.05
Revised Date :2005.08.23
Page No. : 1/6
Features
• VDS=-20V
RDS(ON)=130mΩ@VGS=-4.5V, IDS=-2.8A
RDS(ON)=190mΩ@VGS=-2.5V, IDS=-2A
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
• Pb-free package
Equivalent Circuit
MTP2301N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Ta=25℃
Ta=75℃
MTP2301N3
Symbol
VDS
VGS
ID
IDM
PD
Tj
Tstg
S
G
Limits
Unit
-20
V
±8
V
-2.3
A
-10
A
1.25
W
0.8
-55~+150
°C
-55~+150
°C
CYStek Product Specification