MTP2071M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C417M3
Issued Date : 2012.02.17
Revised Date : 2013.08.12
Page No. : 1/8
20V P-CHANNEL Enhancement Mode MOSFET
MTP2071M3
BVDSS
ID
RDSON@VGS=-4.5V, ID=-4.2A
RDSON@VGS=-2.5V, ID=-2A
Features
• Single Drive Requirement
• Ultra High Speed Switching
• Pb-free package
RDSON@VGS=-1.8V, ID=-1A
-20V
-5A
52mΩ (typ.)
66mΩ (typ.)
80mΩ (typ.)
Symbol
MTP2071M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
VGS
±12
V
ID
-5
A
ID
-4
A
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
IDM
-20 *1, 3
A
2 *2
PD
W
1.3 *2
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
MTP2071M3
CYStek Product Specification