MTP162M3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – 30V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
MTP162M3
Spec. No. : C420M3
Issued Date : 2007.10.08
Revised Date :
Page No. : 1/7
Features
• Single Drive Requirement
• Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A
• Ultra High Speed Switching
• Pb-free package
Symbol
MTP162M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
VGS
±12
ID
-3.2
ID
-2.6
IDM
-10 *1, 3
Pd
2 *2
Linear Derating Factor
0.01
Thermal Resistance, Junction to Ambient
Rth,ja
90 *2
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
MTP162M3
CYStek Product Specification