MTP1406M3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C733M3
Issued Date : 2011.05.16
Revised Date : 2013.08.12
Page No. : 1/5
P-Channel Logic Level Enhancement Mode MOSFET
MTP1406M3
BVDSS
ID
-60V
-4A
RDSON(MAX)
90.8mΩ
Features
• Single Drive Requirement
• Low On-resistance, RDS(ON)=90.8mΩ@VGS=-10V, ID=-4A
• Ultra High Speed Switching
• Pb-free lead plated package
Symbol
MTP1406M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G ^DD S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle≤1%
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
Unit
-60
±20
V
-4
-2.4
A
-16
1.67
W
0.83
-55~+175
°C
MTP1406M3
CYStek Product Specification