MTP1013C3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – -20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C698C3
Issued Date : 2012.07.06
Revised Date : 2012.10.05
Page No. : 1/ 8
-20V P-CHANNEL Enhancement Mode MOSFET
MTP1013C3 BVDSS
ID
-20V
-500mA
RDSON@VGS=-4.5V, ID=-500mA 0.63Ω(typ)
RDSON@VGS=-2.5V, ID=-300mA 1.1Ω(typ)
RDSON@VGS=-1.8V, ID=-150mA 1.7Ω(typ)
Features
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V.
• Compact industrial standard SOT-523 surface mount package.
• Pb-free package.
Equivalent Circuit
MTP1013C3
Outline
SOT-523
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Continuous Drain Current @ TA=70°C, VGS=-4.5V
Pulsed Drain Current *1
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
2. When mounted on FR-4 board with 1 sq inch pad size.
Limits
-20
±8
-0.5
-0.4
-2
280 *2
450 *2
-55~+150
Unit
V
A
mW
°C/W
°C
MTP1013C3
CYStek Product Specification