MTNK5C3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – ESD protected N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C800C3
Issued Date : 2011.01.19
Revised Date :
Page No. : 1/8
ESD protected N-Channel Enhancement Mode MOSFET
MTNK5C3
BVDSS
ID
RDSON(MAX)
30V
100mA
8Ω
Description
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package
Symbol
MTNK5C3
G
G：Gate
S：Source
D：Drain
S
Outline
SOT-523
D
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain Current
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1%
*2. With each pin mounted on the recommended lands.
*3. Human body model, 1.5kΩ in series with 100pF
Symbol
BVDSS
VGS
ID
IDP
IDR
IDRP
PD
Tj ; Tstg
Rth,ja
Limits
30
±20
±100
±200 *1
±100
±200 *1
150 *2
750 *3
-55~+150
833
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C/W
MTNK5C3
CYStek Product Specification