MTNK3Y3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – ESD protected N-CHANNEL MOSFET

CYStech Electronics Corp.
Spec. No. : C447Y3
Issued Date : 2011.02.24
Revised Date : 2012.10.05
Page No. : 1/6
ESD protected N-CHANNEL MOSFET
MTNK3Y3
BVDSS
ID
RDSON@VGS=4.5V, ID=255mA
RDSON@VGS=2.5V, ID=20mA
Description
• Low voltage drive, 1.8V.
• Easy to use in parallel.
• High speed switching.
• ESD protected device.
• Pb-free package.
RDSON@VGS=1.8V, ID=20mA
RDSON@VGS=1.6V, ID=20mA
20V
255mA
1.7Ω(typ.)
2.2Ω(typ.)
3.5Ω(typ.)
4.1Ω(typ.)
Symbol
MTNK3Y3
Outline
SOT-723
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
MTNK3Y3
Symbol
BVDSS
VGS
ID
IDM
PD
Tj
Rth,ja
Limits
20
±8
255 *2
210 *3
400 *1
440 *2
310 *3
350 *4
-55~+150
280 *2
400 *3
Unit
V
V
mA
mW
V
°C
°C/W
CYStek Product Specification