MTNK3W3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – ESD protected N-CHANNEL MOSFET

CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
MTNK3W3
BVDSS
ID
RDSON
Spec. No. : C447W3
Issued Date : 2010.07.26
Revised Date :
Page No. : 1/6
20V
100mA
3Ω
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
Symbol
MTNK3W3
Outline
SOT-923
G：Gate
S：Source
D：Drain
D
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%.
*2. When device mounted on recommended land pattern.
*3. Human body model, 1.5kΩ in series with 100pF.
Symbol
BVDSS
VGS
ID
IDM
PD
Tj
Rth,ja
Limits
20
±8
100
400 *1
150 *2
350 *3
-55~+150
833
Unit
V
V
mA
mA
mW
V
°C
°C/W
MTNK3W3
CYStek Product Specification