MTNK3S3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – ESD protected N-CHANNEL MOSFET

CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
MTNK3S3
BVDSS
ID
RDSON
Spec. No. : C447S3
Issued Date : 2009.04.29
Revised Date : 2010.06.18
Page No. : 1/6
20V
100mA
3Ω
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
Symbol
MTNK3S3
Outline
SOT-323
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Total Power Dissipation (Tc=25°C)
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Lead Temperature, for 10 second Soldering
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
MTNK3S3
Symbol
BVDSS
VGS
ID
IDM
PD
Tj
Rth,ja
Rth,jc
TL
Limits
20
±8
100
400 *1
200
400
350 *2
-55~+150
625
250
260
Unit
V
V
mA
mA
mW
V
°C
°C/W
°C/W
°C
CYStek Product Specification