MTN9973J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C418J3
Issued Date : 2008.08.20
Revised Date : 2009.02.04
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN9973J3
BVDSS
ID
RDSON
60V
14A
80mΩ
Features
• VDS=60V
RDS(ON)=80mΩ(max.)@VGS=10V, ID=9A
RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN9973J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
MTN9973J3
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
60
±20
14
9
40 *1
27
0.22
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
CYStek Product Specification