MTN9971J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C415J3
Issued Date : 2008.08.14
Revised Date : 2009.02.04
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN9971J3
BVDSS 60V
ID
25A
RDSON 36 mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN9971J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
Symbol
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
60
±20
25
16
80 *1
39
0.31
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
MTN9971J3
CYStek Product Specification