MTN75N03J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN75N03J3
BVDSS
ID
RDSON
Spec. No. : C412J3
Issued Date : 2007.07.05
Revised Date : 2009.02.04
Page No. : 1/7
25V
75A
4.5mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN75N03J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=4.5V, TC=25°C
Continuous Drain Current @VGS=4.5V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
*2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A
MTN75N03J3
Symbol
VDS
VGS
ID
ID
IDM
Pd
EAS
IAS
Tj, Tstg
Limits
25
±20
75
62.5
350 *1
96
0.75
400 *2
40
-55~+150
Unit
V
V
A
A
A
W
W/°C
mJ
A
°C
CYStek Product Specification