MTN7002N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET

CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN7002N3
Spec. No. : C325N3
Issued Date : 2002.12.18
Revised Date : 2005.01.07
Page No. : 1/4
Description
•The MTN7002N3 is a N-channel enhancement-mode MOSFET.
•Pb-free package
Symbol
Outline
MTN7002N3
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source Voltage
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Total Power Dissipation (Tc=25°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Lead Temperature, for 10 second Soldering
Symbol
BVDSS
BVDGR
VGS
ID
ID
IDM
PD
Tj
Tstg
Rth,ja
Rth,jc
TL
Limits
60
60
±40
200 *1
115 *1
800 *2
200
500
-55~+150
-55~+150
625
250
240
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C/W
°C/W
°C
Note : *1. The power dissipation of the package may result in a continuous drain current
*2. Pulse Width ≤ 300µs, Duty cycle ≤2%
MTN7002N3
CYStek Product Specification