MTN6515E3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C739E3
Issued Date : 2009.10.19
Revised Date : 2010.10.18
Page No. : 1/6
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN6515E3
BVDSS
150V
ID
20A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating
RDSON(MAX)
65mΩ
Equivalent Circuit
MTN6515E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTTN6515E3
Limits
Unit
150
±16
V
20
15
A
80
20
5
mJ
2.5
110
W
55
-55~+175
°C
CYStek Product Specification