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MTN55N03J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN55N03J3
BVDSS
ID
RDSON
Spec. No. : C411J3
Issued Date : 2007.07.05
Revised Date : 2009.02.04
Page No. : 1/7
25V
55A
6mΩ
Features
⢠Dynamic dv/dt Rating
⢠Simple Drive Requirement
⢠Repetitive Avalanche Rated
⢠Fast Switching Characteristic
⢠RoHS compliant package
Symbol
MTN55N03J3
Outline
TO-252
Gï¼Gate
Dï¼Drain
Sï¼Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25â)
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
*2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A
MTN55N03J3
Symbol
VDS
VGS
ID
ID
IDM
Pd
EAS
IAS
Tj, Tstg
Limits
25
±20
55
35
215 *1
62.5
0.5
240 *2
31
-55~+150
Unit
V
V
A
A
A
W
W/°C
mJ
A
°C
CYStek Product Specification
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