MTN4N60I3 Datasheet, PDF (1/11 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C408I3
Issued Date : 2010.01.04
Revised Date : 2013.10.18
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN4N60I3
BVDSS : 600V
RDS(ON) : 2.8Ω(typ.)
ID : 4A
Description
The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
MTN4N60I3
Outline
TO-251
TO-251S
G：Gate
D：Drain
S：Source
MTN4N60I3
G DS
G DS
CYStek Product Specification