MTN4N60E3 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C408E3
Issued Date : 2010.12.06
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN4N60E3
BVDSS : 600V
RDS(ON) : 2.1Ω(typ.)
ID : 4A
Description
The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
MTN4N60E3
Outline
TO-220
G：Gate
D：Drain
S：Source
MTN4N60E3
GDS
CYStek Product Specification