MTN3820F3 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C576F3
Issued Date : 2011.11.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN3820F3
BVDSS
100V
ID
26A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP)
VGS=10V, ID=18A 64mΩ
VGS=4V, ID=10A 65mΩ
Symbol
MTN3820F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.14mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Power Dissipation
TC=25℃
TA=25℃
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTN3820F3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
100
V
±20
26
15
A
104
20
35
mJ
5.6
56
W
2
-55~+150
°C
CYStek Product Specification