MTN351AN3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – 30V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN351AN3
Spec. No. : C410N3
Issued Date : 2007.06.28
Revised Date :
Page No. : 1/5
Features
• VDS=30V
RDS(ON)=60mΩ@VGS=10V, ID=3A
RDS(ON)=100mΩ@VGS=4.5V, ID=2A
• Lower gate charge
• Compact and low profile SOT-23 package
Equivalent Circuit
MTN351AN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
PD
Rth, j-a
Tj, Tstg
30
±20
3 (Note 1)
10 (Note 2 & 3)
1.38
0.01
90 (Note 1)
-55 ~ +150
Note : 1. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
2. Pulse width limited by maximum junction temperature
3. Pulse width≤300μs, duty cycle≤2%
Unit
V
V
A
A
W
W/°C
°C/W
°C
MTN351AN3
CYStek Product Specification