MTN3484V8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C581V8
Issued Date : 2012.03.15
Revised Date : 2012.03.26
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN3484V8
BVDSS
ID
VGS=10V, ID=3.5A
RDSON(TYP)
VGS=4.5V, ID=3.5A
100V
3.5A
92mΩ
97mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
MTN3484V8
Outline
DFN3×3
Pin 1
G：Gate
D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TA=25°C, VGS=10V
ID
Continuous Drain Current @ TA=100°C, VGS=10V
ID
Pulsed Drain Current *1 & 2
IDM
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. Duty cycle ≤ 1%.
*3. Surface mounted on a 1 in² pad of FR-4board with 2oz copper, t≤10s.
MTN3484V8
Limits
Unit
100
±20
V
3.5
2.2
A
14
8
W
2.5 *3
-55~+150
°C
CYStek Product Specification