MTN3440N6 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTN3440N6
Spec. No. : C874N6
Issued Date : 2013.07.10
Revised Date : 2013.09.06
Page No. : 1/8
Description
The MTN3440N6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
Equivalent Circuit
MTN3440N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol Limits Unit
VDS
150
V
VGS
±20
2.2
1.8
ID
1.7
A
1.4
IDM
8
3.2
2.1
PD
W
2
1.25
Tj, Tstg -55~+150 °C
MTN3440N6
CYStek Product Specification