MTN3434G6 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C781G6
Issued Date : 2011.06.10
Revised Date :
Page No. : 1/6
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ^{BVDSS 30V}
MTN3434G6
ID
6.1A
RDSON 34mΩ
Description
The MTN3434G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Capable of 2.5V gate drive
• Pb-free lead plating package
Equivalent Circuit
MTN3434G6
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±12
Continuous Drain Current @VGS=4.5V, TA=25 °C (Note 1)
ID
6.1
Continuous Drain Current @VGS=4.5V, TA=70 °C (Note 1)
ID
4.9
Pulsed Drain Current (Note 2, 3)
IDM
30
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
PD
1.14
0.01
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
110
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. 180℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
MTN3434G6
CYStek Product Specification