MTN3418BN3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET

CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN3418BN3
BVDSS
ID
RDSON(max)
Spec. No. : C580N3
Issued Date : 2011.09.16
Revised Date :
Page No. : 1/7
30V
1.7A
450mΩ
Description
The MTN3418BN3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive(2.5V)
• Easily designed drive circuits
• Pb-free package
Symbol
MTN3418BN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
MTN3418BN3
Symbol
VDSS
VGSS
ID
IDP
PD
TCH
Tstg
Limits
Unit
30
V
±20
V
1.7
A
6.8 *1
A
900 *2
mW
400 *3
V
+150
°C
-55~+150
°C
CYStek Product Specification