MTN3410J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C433J3
Issued Date : 2008.12.24
Revised Date : 2009.02.04
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN3410J3
BVDSS
ID
RDS(ON)
100V
50A
25mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN3410J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation (TC=25℃)
(Note 2)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTN3410J3
Limits
100
±30
50
35
150
30
45
22.5
60
0.37
-55~+175
Unit
V
A
mJ
W
W/°C
°C
CYStek Product Specification