MTN3400N3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – 30V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN3400N3
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 1/ 7
Features
• VDS=30V
RDS(ON)=33mΩ@VGS=4.5V, ID=5A
RDS(ON)=52mΩ@VGS=2.5V, ID=4A
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
MTN3400N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
30
±12
5.8
4.9
30
1.38
0.01
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
MTN3400N3
CYStek Product Specification