MTN3055L3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C390L3
Issued Date : 2010.10.05
Revised Date : 2012.08.20
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTN3055L3
BVDSS
ID
RDSON@VGS=10V, ID=4A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating package
RDSON@VGS=4.5V, ID=3A
30V
8.3A
19mΩ (typ)
25mΩ (typ)
Symbol
MTN3055L3
Outline
SOT-223
G：Gate
S：Source
D：Drain
D
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
*1
TA=25℃
*2
TA=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s.
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj, Tstg
Limits
Unit
30
V
±20
V
8.3
A
6.6
A
20
A
2.7
W
1.1
-55~+150
°C
MTN3055L3
CYStek Product Specification