MTN303KN3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 20V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C814N3
Issued Date : 2012.05.15
Revised Date : 2012.08.27
Page No. : 1/8
20V N-CHANNEL Enhancement Mode MOSFET
MTN303KN3
BVDSS
ID
RDSON@VGS=4.5V, ID=600mA
RDSON@VGS=2.5V,ID=400mA
RDSON@VGS=1.8V,ID=350mA
Features
• Simple drive requirement
• Small package outline
• Pb-free package
20V
850mA
300mΩ(typ)
450mΩ(typ)
870mΩ(typ)
Symbol
MTN303KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Human body model, 1.5kΩ in series with 100pF
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
MTN303KN3
Limits
20
±8
850
680
3.5
0.35
0.003
2000 (Note 3)
-55~+150
Unit
V
V
mA
mA
A
W
W/°C
V
°C
CYStek Product Specification