MTN3023I3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C737I3
Issued Date : 2012.11.06
Revised Date :
Page No. : 1/8
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN3023I3
BVDSS
30V
ID
30A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
RDSON(TYP)
VGS=10V, ID=20A 14mΩ
VGS=4.5V, ID=10A 21mΩ
Equivalent Circuit
MTN3023I3
Outline
TO-251AB
TO-251S
G：Gate D：Drain
S：Source
G DS
GD S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Total Power Dissipation @TC=25℃
Total Power Dissipation @TA=25℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
Limits
Unit
VDS
30
VGS
±20
V
ID
30
ID
18
A
IDM
100
50
PD
W
1.14
Tj, Tstg -55~+150
°C
MTN3023I3
CYStek Product Specification