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MTN2N60I3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C435I3
Issued Date : 2009.01.20
Revised Date :2009.02.05
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2N60I3
BVDSS : 650V @Tj=150â
RDS(ON) : 4.7Ω
ID : 1.9A
Description
The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
⢠BVDSS=650V typically @ Tj=150â
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Applications
⢠Open Framed Power Supply
⢠Adapter
⢠STB
Symbol
MTN2N60I3
Outline
TO-251
Gï¼Gate
Dï¼Drain
Sï¼Source
MTN2N60I3
GB DC S
CYStek Product Specification
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