MTN2572F3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C434F3
Issued Date : 2010.09.09
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2572F3
BVDSS
ID
RDS(ON)
150V
48A
50mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
MTN2572F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.2mH, ID=18A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Power Dissipation
TC=25℃
TC=100℃
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTN2572F3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
150
V
±30
48
30
A
140
18
32.4
mJ
16.2
125
W
57
-55~+175
°C
CYStek Product Specification