MTN2510J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2013.12.26
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2510J3
BVDSS
ID
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=10V, ID=30A
VGS=6V, ID=20A
100V
50A
19mΩ
23mΩ
Symbol
MTN2510J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTN2510J3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2510J3
CYStek Product Specification