MTN2328M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET

CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 1/8
N-CHANNEL MOSFET
MTN2328M3
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=4.5V, ID=3A
100V
3A
130mΩ(typ)
136mΩ(typ)
Description
The MTN2328M3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Pb-free lead plating package
Symbol
MTN2328M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
GD D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=100°C
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
ID
IDM
PD
Tj; Tstg
Limits
Unit
100
V
±20
V
3
A
1.9
A
12 *1
A
2.1 *2
W
-55~+150
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
MTN2328M3
CYStek Product Specification