MTN2310N3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – 60V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode MOSFET
MTN2310N3
Spec. No. : C393N3
Issued Date : 2007.10.24
Revised Date :
Page No. : 1/6
Features
• VDS=60V
RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A
RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A
• Simple drive requirement
• Small package outline
Symbol
MTN2310N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj
Tstg
Limits
60
±20
3.0
2.3
10
1.38
0.01
-55~+150
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
V
V
A
A
A
W
W/°C
°C
°C
MTN2310N3
CYStek Product Specification