MTN2310M3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – 60V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode MOSFET
MTN2310M3
Spec. No. : C393M3
Issued Date : 2007.05.28
Revised Date :
Page No. : 1/6
Features
• VDS=60V
RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A
RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A
• Simple drive requirement
• Small package outline
Symbol
MTN2310M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board, t≤10sec.
MTN2310M3
Symbol
VDS
VGS
ID
IDM
PD
Tj
Tstg
DG D S
Limits
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
°C
CYStek Product Specification