MTN2306ZN3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – 20V N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C582N3
Issued Date : 2011.08.30
Revised Date :
Page No. : 1/ 7
20V N-Channel Logic Level Enhancement Mode MOSFET
MTN2306ZN3
BVDSS
ID
VGS=10V, ID=5A
Features
• VDS=20V
RDS(ON)=30mΩ@VGS=4.5V, ID=5A
RDS(ON)=40mΩ@VGS=2.5V, ID=2.6A
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free lead plating package
RDSON(MAX)
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1A
20V
6A
28mΩ
30mΩ
40mΩ
60mΩ
Equivalent Circuit
MTN2306ZN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
ESD susceptibility (Note 4)
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
MTN2306ZN3
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
20
±8
6
4
24
1.38
0.01
2600
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
V
°C/W
°C
CYStek Product Specification