MTN2306N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2012.04.12
Revised Date :
Page No. : 1/8
30V N-Channel Logic Level Enhancement Mode MOSFET
MTN2306N3
BVDSS
ID
RDSON(TYP)@VGS=10V, ID=3.5A
RDSON(TYP)@VGS=4.5V, ID=2A
30V
4.8A
35mΩ
58mΩ
Features
• Lower gate charge
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTN2306N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C, VGS=10V
Continuous Drain Current _{TA=70°C, VGS=10V}
ID
4.8
A
3.8
Pulsed Drain Current
IDM
TA=25°C
Power Dissipation
TA=70°C
PD
20 (Note 1 & 2) A
1.38 (Note 3)
W
0.88 (Note 3)
Thermal Resistance, Junction to Ambient
Rth, j-a
90 (Note 3)
°C/W
Operating Junction and Storage Temperature
Tj, Tstg
-55 ~ +150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
3. Surface mounted on 1 in² copper pad of FR4 board, t≤10s; 270°C/W when mounted on min. copper pad.
MTB2306N3
CYStek Product Specification