MTN2306AM3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-CHANNEL MOSFET

CYStech Electronics Corp.
Spec. No. : C414M3
Issued Date : 2012.03.29
Revised Date :
Page No. : 1/8
N-CHANNEL MOSFET
MTN2306AM3
BVDSS
ID
RDSON@VGS=10V, ID=5.8A
RDSON@VGS=4.5V, ID=5A
30V
6.8A
25mΩ(typ)
27mΩ(typ)
Description
The MTN2306AM3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Pb-free lead plating package
Symbol
MTN2306AM3
Outline
SOT-89
G：Gate
S：Source
D：Drain
GD D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=100°C
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
ID
IDM
PD
Tj; Tstg
Limits
Unit
30
V
±12
V
6.8
A
4.3
A
30 *1
A
2 *2
W
-55~+150
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper, t≤10s.
MTN2306AM3
CYStek Product Specification