MTN2304N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2012.02.10
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTN2304N3
BVDSS
30V
ID
5A
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=10V, ID=5A 20mΩ
VGS=4.5V, ID=4A 28mΩ
Symbol
MTN2304N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Pulsed Drain Current (Notes 1, 2) @VGS=10V
Maximum Power Dissipation (Note 3)
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board.
Symbol
Limits
Unit
VDS
30
V
VGS
±20
V
ID
5
A
4
A
IDM
20
A
PD
1.38
W
0.83
Tj, Tstg
-55~+150
°C
MTN2304N3
CYStek Product Specification