MTN2304M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 30V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C737M3
Issued Date : 2012.07.26
Revised Date : 2013.08.12
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTN2304M3
BVDSS
ID
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
RDSON(TYP)
VGS=10V, ID=5A
VGS=4.5V, ID=4A
30V
6A
20mΩ
28mΩ
Symbol
MTN2304M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
DG D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V, TA=25°C
ID
Continuous Drain Current @VGS=10V, TA=70°C
ID
Pulsed Drain Current
IDM
Total Power Dissipation (TA=25℃)
Pd
Linear Derating Factor
30
±20
6
4.8
20 *1
1.2 *2
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Note : *1. Pulse width limited by safe operating area.
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad.
Unit
V
V
A
A
A
W
W/ °C
°C
MTN2304M3
CYStek Product Specification