MTN2302V3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 20V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302V3
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date : 2010.06.18
Page No. : 1/9
Features
• VDS=20V
RDS(ON)=85mΩ(max.)@VGS=4.5V, IDS=3.6A
RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A
• Simple drive requirement
• Small package outline
• Capable of 2.5V gate drive
• Pb-free package
Symbol
MTN2302V3
Outline
TSOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
20
±8
3.2
2.6
10
1.38
0.01
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
V
V
A
A
A
W
W/°C
°C
MTN2302V3
CYStek Product Specification