MTN2302N3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – 20V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302N3
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 1/5
Features
• VDS=20V
RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A
RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
MTN2302N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Ta=25℃
Ta=75℃
Symbol
VDS
VGS
ID
IDM
PD
Tj
Tstg
MTN2302N3
S
G
Limits
Unit
20
V
±8
V
2.4
A
10
A
1.25
W
0.8
-55~+150
°C
-55~+150
°C
CYStek Product Specification