MTN2300N3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – 20V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
MTN2300N3
Spec. No. : C413N3
Issued Date : 2007.07.05
Revised Date :
Page No. : 1/5
Features
• VDS=20V
RDS(ON)=28mΩ@VGS=4.5V, IDS=6A
RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A
• Low on-resistance
• Capable of 2.5V gate drive
• Excellent thermal and electrical capabilities
• Compact and low profile SOT-23 package
Equivalent Circuit
MTN2300N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board, t≤10sec.
MTN2300N3
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
20
±8
6
4.8
20
1.25
0.01
100
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
CYStek Product Specification