MTN20NF06J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2009.02.04
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN20NF06J3
Features
• VDS=60V, ID=50A, RDS(ON)=22mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
• Repetitive Avalanche Rated
• Fast Switching Characteristic
BVDSS
ID
RDSON
60V
50A
22mΩ
Symbol
MTN20NF06J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC=25℃)
Derates above 25°C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
dv/dt
PD
Tj, Tstg
Note : *1.Repetitive Rating : Pulse width limited by maximum junction temperature
*2. L=230μH, IAS=50A,VDD=25V, starting TJ=+25℃
*3. ISD≤50A, dI/dt<100A/μs, VDD≤BVDSS, TJ≤Tj(max).
MTN20NF06J3
Limits
60
±20
50
35
200
50
447
6
7
60
0.4
-55~+175
Unit
V
V
A
mJ
V/ns
W
W/°C
°C
CYStek Product Specification