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MTN1N65I3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C437I3
Issued Date : 2009.01.23
Revised Date :2009.02.04
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTN1N65I3
BVDSS : 700V @Tj=150â
RDS(ON) : 9.5Ω
ID : 1.0A
Description
The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
⢠BVDSS=700V typically @ Tj=150â
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠RoHS compliant package
Applications
⢠Cell phone charger
⢠Standby power
Symbol
MTN1N65I3
Outline
TO-251
Gï¼Gate
Dï¼Drain
Sï¼Source
MTN1N65I3
GB DC S
CYStek Product Specification
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