MTN1N60L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C721L3
Issued Date : 2014.11.27
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN1N60L3
Description
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=0.2A
600V
0.4A
0.9A
7.8Ω(typ)
The MTN1N60L3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTN1N60L3
Outline
SOT-223
D
G：Gate D：Drain S：Source
S
D
G
Ordering Information
Device
MTN1N60L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN1N60L3
CYStek Product Specification