MTN12N60E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C743E3
Issued Date : 2009.10.08
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTN12N60E3
BVDSS :660V @Tj=150°C
RDS(ON) : 0.65Ω
ID : 12A
Description
The MTN12N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=660V typically @ Tj=150℃
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Ballast
• Inverter
Symbol
MTN12N60E3
Outline
TO-220
G：Gate
D：Drain
S：Source
MTN12N60E3
GDS
CYStek Product Specification